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Power Transistors
2SD1755
Silicon NPN epitaxial planar type
Unit: mm
7.00.3 3.50.2
For power amplification with high forward current transfer ratio
7.20.3 0.80.2
3.00.2
1.00.2
q
q q
High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
10.0 -0.
+0.3
s Features
1.10.1 0.750.1
0.850.1 0.40.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
Ratings 100 60 15 12 6 3 15 1.3 150 -55 to +150
Unit V
10.20.3 7.20.3
V V A A
3.00.2
1.0 max.
2.5
0.750.1 1.10.1
0.5 max.
0.90.1 0 to 0.15
A
1 2 3
W
2.30.2
C C
4.60.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE* VCE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 15V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCE = 12V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 0.3 1.5 0.6 50 60 300 2000 0.5 V MHz s s s min typ max 100 100 Unit A A V
*h
FE
Rank classification
Q P
Rank hFE
300 to 1200 800 to 2000
2.50.2
1.0
2.50.2
1.0
1
Power Transistors
PC -- Ta
20 6 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C 5
2SD1755
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
IC/IB=50
Collector power dissipation PC (W)
3
Collector current IC (A)
15 (1)
IB=10mA 4 9mA 8mA 7mA 6mA 5mA 2 4mA 3mA 2mA 1 1mA 0
1 TC=100C 0.3 25C -25C 0.1
10
3
5
0.03
(2) 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8
10
12
0.01 0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
10
hFE -- IC
IC/IB=50 100000 VCE=4V 1000 300 100 30 10 3 1 0.3 0.1 0.01 0.03
fT -- IC
VCE=12V f=10MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
3
10000
1
TC=-25C
3000 1000 300 100 30 10 0.01 0.03
TC=100C 25C -25C
0.3
100C
25C
0.1
0.03
0.01 0.1
0.3
1
3
10
0.1
0.3
1
3
10
Transition frequency fT (MHz)
30000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
10000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=50(IB1=-IB2) VCC=50V TC=25C tstg tf ton
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25C ICP 10 I C 3 1 0.3 0.1 0.03 0.01 10ms 300ms t=1ms
Collector output capacitance Cob (pF)
3000 1000 300 100 30 10 3 1 0.1
Switching time ton,tstg,tf (s)
10 3 1 0.3 0.1 0.03 0.01
0.3
1
3
10
30
100
0
1
2
3
4
5
6
7
8
Collector current IC (A)
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
2SD1755
Thermal resistance Rth(t) (C/W)
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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